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SILICON RFIC LOW
CURRENT AMPLIFIER UPC8179TB
FOR MOBILE COMMUNICATIONS
FEATURES
? HIGH DENSITY SURFACE MOUNTING:
6 Pin Super Minimold Package (2.0 x 1.25 x 0.9 mm)
? SUPPLY VOLTAGE:
+20
+10
POWER GAIN vs. FREQUENCY
V CC = 3.0 V
T A = -40°C
T A = +25°C
2.4 GHz
V CC = 2.4 to 3.3 V
? HIGH EFFICIENCY:
P O (1dB) = +3.0 dBm TYP at f = 1.0 GHz
P O (1dB) = +1.5 dBm TYP at f = 1.9 GHz
P O (1dB) = +1.0 dBm TYP at f = 2.4 GHz
? POWER GAIN:
G P = 13.5 dB TYP at f = 1.0 GHz
G P = 15.5 dB TYP at f = 1.9 GHz
G P = 15.5 dB TYP at f = 2.4 GHz
0
–10
–20
–30
T A = +85°C
1.0 GHz
1.9 GHz
? EXCELLENT ISOLATION:
ISL = 44 dB TYP at f = 1.0 GHz
ISL = 42 dB TYP at f = 1.9 GHz
ISL = 41 dB TYP at f = 2.4 GHz
–40
0.1 0.3 1.0
Output match for best performance
at each frequency
3.0
? LOW CURRENT CONSUMPTION:
I CC = 4.0 mA TYP AT VCC = 3.0 V
? OPERATING FREQUENCY:
I CC = 4.0 mA TYP AT VCC = 3.0 V
? LIGHT WEIGHT:
7 mg (standard Value)
APPLICATIOIN
? Buffer amplifiers for 0.1 to 2.4 GHz mobile communications
systems.
ELECTRICAL CHARACTERISTICS,
DESCRIPTION
NEC's UPC8179TB is a silicon monolithic integrated circuit
designed as amplifier for mobile communications. This IC can
realize low current consumption with external chip inductor
which can be realized on internal 50 Ω wideband matched IC.
This low current amplifier uns on 3.0 V. This IC is manufactured
using NEC's 30 GHz fMAX UHS0 (Ultra High Speed Process)
silicon bipolar process. This process uses direct silicon nitride
passivation film and gold electrodes. These materials can
protect the chip surface from pollution and prevent corrosion/
migration. Thus this IC has exellent performance uniformity
and reliability.
(Unless otherwise specified, T A = +25 ° C, V CC = V OUT = 3.0 V, Z S = Z L = 50 Ω , at LC matched Frequency)
PART NUMBER
PACKAGE OUTLINE
UPC8179TB
S06
SYMBOLS
I CC
PARAMETERS AND CONDITIONS
Circuit Current (no input signal)
UNITS
mA
MIN
2.9
TYP
4.0
MAX
5.4
GP
Power Gain,
f = 1.0 GHz, P IN = -30 dBm
dB
11.0
13.5
15.5
f = 1.9 GHz, P IN = -30 dBm
f = 2.4 GHz, P IN = -30 dBm
13.0
13.0
15.5
15.5
17.5
17.5
ISOL
Isolation,
f = 1.0 GHz, P IN = -30 dBm
dB
39.0
44.0
–
f = 1.9 GHz, P IN = -30 dBm
f = 2.4 GHz, P IN = -30 dBm
37.0
36.0
42.0
41.0
–
–
P 1dB
NF
Output Power at
1 dB gain
compression,
Noise Figure,
f = 1.0 GHz
f = 1.9 GHz
f = 2.4 GHz
f = 1.0 GHz
dB
dB
-0.5
-2.0
-3.0
–
3.0
1.5
1.0
5.0
–
–
–
6.5
f = 1.9 GHz
f = 2.4 GHz
–
–
5.0
5.0
6.5
6.5
RL IN
Input Return Loss,
(without matching
circuit)
f = 1.0 GHz, P IN = -30 dBm
f = 1.9 GHz, P IN = -30 dBm
f = 2.4 GHz, P IN = -30 dBm
dB
4.0
4.0
6.0
7.0
7.0
9.0
–
–
–
California Eastern Laboratories
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